CXDM3069N surface mount n-channel enhancement-mode silicon mosfet description: the central semiconductor CXDM3069N is a high current n-channel enhancement-mode silicon mosfet, designed for high speed pulsed amplifier and driver applications. this mosfet offers high current, low r ds(on) , low threshold voltage, and low leakage current. marking: full part number maximum ratings: (t a =25c) symbol units drain-source voltage v ds 30 v gate-source voltage v gs 12 v continuous drain current (steady state) i d 6.9 a maximum pulsed drain current, tp=10s i dm 40 a power dissipation p d 1.2 w operating and storage junction temperature t j , t stg -55 to +150 c thermal resistance ja 104 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i gssf , i gssr v gs =12v, v ds =0 100 na i dss v ds =24v, v gs =0 1.0 a bv dss v gs =0, i d =250a 30 v v gs(th) v gs =v ds , i d =250a 0.7 0.9 1.4 v r ds(on) v gs =10v, i d =7.0a 25 30 m r ds(on) v gs =4.5v, i d =6.0a 28 35 m r ds(on) v gs =2.5v, i d =4.0a 38 50 m q g(tot) v ds =15v, v gs =10v, i d =5.4a 11 nc q gs v ds =15v, v gs =10v, i d =5.4a 1.0 nc q gd v ds =15v, v gs =10v, i d =5.4a 1.2 nc c rss v ds =15v, v gs =0, f=1.0mhz 47 pf c iss v ds =15v, v gs =0, f=1.0mhz 580 pf c oss v ds =15v, v gs =0, f=1.0mhz 42 pf t on v dd =15v, i d =1.0a, r g =15 20 ns t off v dd =15v, i d =1.0a, r g =15 28 ns features: ? low r ds(on) (50m max @ v gs =2.5v) ? high current (i d =6.9a) ? logic level compatibility applications: ? load/power switches ? power supply converter circuits ? battery powered portable equipment sot-89 case r1 (10-august 2012) www.centralsemi.com
CXDM3069N surface mount n-channel enhancement-mode silicon mosfet lead code: 1) gate 2) drain 3) source marking: full part number sot-89 case - mechanical outline pin configuration www.centralsemi.com r1 (10-august 2012)
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